Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications

Dense Approximate Storage in Phase-Change Memory

Multi-level phase-change memory stores bits by quantizing the resistance value of each cell. For example, a PCM cell with four distinct resistance levels can store two bits. By dramatically increasing this granularity, high density can be achieved at the cost of storage reliability. Many applications—those that deal with sensory data or are otherwise resilient to errors—can take advantage of th...

Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications

A Page-Based Storage Framework for Phase Change Memory

Phase change memory (PCM) has emerged as a promising candidate for next-generation memories, owing to its low power consumption, non-volatility, and high storage-density. However, PCM has limited write endurance, i.e., it can only undergo a limited number of write operations, leading to a short lifecycle. Thus, it is an important issue to find out an efficient way to use PCM in memory hierarchy...

A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into G...

Modeling of SET seasoning effects in Phase Change Memory arrays

The experimental analysis of the electrical behavior of Phase Change Memory arrays evidenced a seasoning effect both on SET and RESET state. The previous modeling efforts on this issue were addressed only towards RESET operation. This work presents a SET seasoning model implemented within a numerical simulator starting from the extraction of the characteristic erase operation kinetic parameters...